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FDH45N50F N-Channel MOSFET

FDH45N50F Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDH45N50F *.

FDH45N50F Features

* With TO-247 package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDH45N50F Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 45 28.4 180 PD Total Dissipation @TC=25℃ 625 Tch Max. Operati

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Datasheet Details

Part number
FDH45N50F
Manufacturer
INCHANGE
File Size
207.63 KB
Datasheet
FDH45N50F-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDH45N50F-like datasheet