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FDI036N10A - N-Channel MOSFET

FDI036N10A Description

isc N-Channel MOSFET Transistor FDI036N10A *.

FDI036N10A Features

* With TO-262 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDI036N10A Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation

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Datasheet Details

Part number
FDI036N10A
Manufacturer
INCHANGE
File Size
317.28 KB
Datasheet
FDI036N10A-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDI036N10A-like datasheet