FDI036N10A - N-Channel MOSFET

Datasheet Summary

Features

With TO-262 packaging.
Drain Source Voltage- : VDSS ≥ 100V.
Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	FDI036N10A
Manufacturer	INCHANGE
File Size	317.28 KB
Description	N-Channel MOSFET
Datasheet	FDI036N10A Datasheet
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isc N-Channel MOSFET Transistor FDI036N10A ·FEATURES ·With TO-262 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation 263 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.

Published: Oct 26, 2020 |