Datasheet4U Logo Datasheet4U.com

FDI036N10A - N-Channel MOSFET

FDI036N10A Description

isc N-Channel MOSFET Transistor FDI036N10A *.

FDI036N10A Features

* With TO-262 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 4.5mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDI036N10A Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation

📥 Download Datasheet

Preview of FDI036N10A PDF
datasheet Preview Page 2

Datasheet Details

Part number
FDI036N10A
Manufacturer
INCHANGE
File Size
317.28 KB
Datasheet
FDI036N10A-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • FDI030N06 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDI038AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDI025N06 - MOSFET (Fairchild Semiconductor)
  • FDI040N06 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDI045N10A - 100V 164A N-Channel MOSFET (ON Semiconductor)
  • FDI047AN08A0 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDI150N10 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDI2532 - N-Channel MOSFET (Fairchild Semiconductor)

📌 All Tags

INCHANGE FDI036N10A-like datasheet