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FDI150N10

N-Channel PowerTrench MOSFET

FDI150N10 Features

* RDS(on) = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant Description This N-Channel MOSFET is

FDI150N10 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Batte.

FDI150N10 Datasheet (534.63 KB)

Preview of FDI150N10 PDF

Datasheet Details

Part number:

FDI150N10

Manufacturer:

Fairchild Semiconductor

File Size:

534.63 KB

Description:

N-channel powertrench mosfet.

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TAGS

FDI150N10 N-Channel PowerTrench MOSFET Fairchild Semiconductor

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