FDI150N10 - N-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDI150N10 Datasheet Preview — Preview of FDI150N10 PDF

Datasheet Details

Part number	FDI150N10
Manufacturer	Fairchild ↗ Semiconductor
File Size	534.63 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDI150N10-FairchildSemiconductor.pdf

FDI150N10 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micor Solar Inverter D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbol V

Features

RDS(on) = 12 mΩ (Typ. ) @ VGS = 10 V, ID = 49 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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Published: Aug 30, 2015 |