FDI150N10 Datasheet, Mosfet, Fairchild Semiconductor

FDI150N10 Features

  • Mosfet
  • RDS(on) = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)

PDF File Details

Part number:

FDI150N10

Manufacturer:

Fairchild Semiconductor

File Size:

534.63kb

Download:

📄 Datasheet

Description:

N-channel powertrench mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize th

Datasheet Preview: FDI150N10 📥 Download PDF (534.63kb)
Page 2 of FDI150N10 Page 3 of FDI150N10

FDI150N10 Application

  • Applications
  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives and Unin

TAGS

FDI150N10
N-Channel
PowerTrench
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

FDI025N06 - MOSFET (Fairchild Semiconductor)
FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm Features • RDS(on) = 1.9mΩ ( Typ.) @.

FDI030N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDI030N06 — N-Channel PowerTrench® MOSFET FDI030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.6 mΩ (Ty.

FDI036N10A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FDI036N10A ·FEATURES ·With TO-262 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance:.

FDI038AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDP038AN06A0 / FDI038AN06A0 August 2002 FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.).

FDI038AN06A0 - N-Channel MOSFET (ON Semiconductor)
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.8 mΩ Features A.

FDI040N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDI040N06 N-Channel PowerTrench® MOSFET June 2009 FDI040N06 N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ Features • RDS(on) = 3.2mΩ ( Typ.) @ VGS.

FDI045N10A - N-Channel MOSFET (ON Semiconductor)
FDP045N10A / FDI045N10A MOSFET – N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW Description This N−Channel MOSFET is produced using ON Semiconductor’s a.

FDI045N10A - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Fe.

FDI047AN08A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Featur.

FDI047AN08A0 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Featur.

Stock and price

onsemi
MOSFET N-CH 100V 57A I2PAK
DigiKey
FDI150N10
3026 In Stock
Qty : 2000 units
Unit Price : $1.19
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts