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FDI150N10 - N-Channel PowerTrench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batte

Features

  • RDS(on) = 12 mΩ (Typ. ) @ VGS = 10 V, ID = 49 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Datasheet Details

Part number FDI150N10
Manufacturer Fairchild Semiconductor
File Size 534.63 KB
Description N-Channel PowerTrench MOSFET
Datasheet download datasheet FDI150N10 Datasheet
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FDI150N10 — N-Channel PowerTrench® MOSFET FDI150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 16 mΩ November 2013 Features • RDS(on) = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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