FDI040N06 - N-Channel MOSFET

Fairchild Semiconductor

FDI040N06 Datasheet Preview — Preview of FDI040N06 PDF

Datasheet Details

Part number	FDI040N06
Manufacturer	Fairchild ↗ Semiconductor
File Size	552.24 KB
Description	N-Channel MOSFET
Datasheet	FDI040N06_FairchildSemiconductor.pdf

FDI040N06 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC to DC convertors / Synchronous Rectification D G D S I2-PAK FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol www.DataSheet4U.com VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID IDM EAS dv/dt PD TJ, TSTG TL Drain C

Features

RDS(on) = 3.2mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant tm General.

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Published: Oct 14, 2009 |