FDI045N10A - 100V 164A N-Channel MOSFET

ON Semiconductor

FDI045N10A Datasheet Preview — Preview of FDI045N10A PDF

Datasheet Details

Part number	FDI045N10A
Manufacturer	ON Semiconductor ↗
File Size	596.47 KB
Description	100V 164A N-Channel MOSFET
Datasheet	FDI045N10A-ONSemiconductor.pdf

FDI045N10A Product details

Description

This N Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on state resistance while maintaining superior switching performance.

Features

RDS(on) = 3.8 mW ( Typ. ) @ VGS = 10 V, ID = 100 A.
Fast Switching Speed.
Low Gate Charge, QG = 54 nC (Typ. ).
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
This Device is Pb.
Free and is RoHS Compliant.

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Published: Dec 25, 2023 |