FDI025N06 - MOSFET

Fairchild Semiconductor

FDI025N06 Datasheet Preview — Preview of FDI025N06 PDF

Datasheet Details

Part number	FDI025N06
Manufacturer	Fairchild ↗ Semiconductor
File Size	502.36 KB
Description	MOSFET
Datasheet	FDI025N06-FairchildSemiconductor.pdf

FDI025N06 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC to DC convertors / Synchronous Rectification D GDS TO-262 FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain

Features

RDS(on) = 1.9mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(on).
High power and current handling capability.
RoHS compliant General.

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Published: Jan 13, 2017 |