FDI025N06 MOSFET

Fairchild Semiconductor

Description

FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-st.

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Datasheet Specifications

Part number: FDI025N06
Manufacturer: Fairchild Semiconductor
File Size: 502.36 KB
Datasheet: FDI025N06-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 1.9mΩ ( Typ. ) @ VGS = 10V, ID = 75A
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(on)
* High power and current handling capability

FDI025N06 Distributors

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FDI025N06 MOSFET Fairchild Semiconductor

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