FDI025N06

MOSFET

Fairchild Semiconductor

FDI025N06 Features

* RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(on)

* High power and current handling capability

* RoHS compliant General Description This N-Channel MO

FDI025N06 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application

* DC to DC convertors / Synchronous Rectification D GDS TO-262 .

FDI025N06 Datasheet (502.36 KB)

FDI025N06 Datasheet Preview — Preview of FDI025N06 PDF

Datasheet Details

Part number:

FDI025N06

Manufacturer:

Fairchild Semiconductor

File Size:

502.36 KB

Description:

Mosfet.

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FDI025N06 MOSFET Fairchild Semiconductor

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FDI025N06 Features

FDI025N06 General Description

Datasheet Details

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