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FDI9409-F085 - N-Channel Power MOSFET

Datasheet Summary

Features

  • Typical RDS(on) = 2.9 mΩ at VGS = 10V, ID = 80 A.
  • Typical Qg(tot) = 43 nC at VGS = 10V, ID = 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Datasheet preview – FDI9409-F085

Datasheet Details

Part number FDI9409-F085
Manufacturer ON Semiconductor
File Size 539.98 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FDI9409-F085 Datasheet
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Full PDF Text Transcription

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FDI9409-F085 N-Channel PowerTrench® MOSFET FDI9409-F085 N-Channel PowerTrench® MOSFET 40 V, 80 A, 3.8 mΩ Features „ Typical RDS(on) = 2.9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 43 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems GDS D G I2-PAK S (TO-262) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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