IPA60R800CE N-Channel MOSFET

INCHANGE

Description

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor *.

📥 Download Datasheet

IPA60R800CE Datasheet Preview — Preview of IPA60R800CE PDF

Datasheet Specifications

Part number: IPA60R800CE
Manufacturer: INCHANGE
File Size: 221.50 KB
Datasheet: IPA60R800CE-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220F Package
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 8.4 5.3 A IDM Drain Current-Single Pulsed 15.7 A PD Total Dis

IPA60R800CE Distributors

📁 Related Datasheet

IPA60R060C7 IPA60R060P7 IPA60R080P7 IPA60R099C6 IPA60R099C7 IPA60R099P6

📌 All Tags

IPA60R800CE N-Channel MOSFET INCHANGE

INCHANGE IPA60R800CE-like datasheet