IPB055N03L
INCHANGE
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N-channel mosfet.
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IPB055N03L - MOSFET
(Infineon)
Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters • Qualified according to JED.
IPB055N03LG - MOSFET
(Infineon Technologies)
Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JE.
IPB050N06N - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPB050N06NG - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPB051NE8N - Power-Transistor
(Infineon)
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPB051NE8NG - Power-Transistor
(Infineon)
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPB052N04N - Power-Transistor
(Infineon)
If^S
%&$ #` # : A 0<& <,9=4=>: <
6LHZ[XLY R 3 DEDH;E5: ;@9 & ( , - 8AC, & ) , R( BE;? ;K76 E75: @A>A9J 8AC 5A@G7CE7CD R* F3 >;8;76 3 55.
IPB052N04NG - Power-Transistor
(Infineon Technologies)
If^S
%&$ #` # : A 0<& <,9=4=>: <
6LHZ[XLY R 3 DEDH;E5: ;@9 & ( , - 8AC, & ) , R( BE;? ;K76 E75: @A>A9J 8AC 5A@G7CE7CD R* F3 >;8;76 3 55.
IPB054N06N3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB054N06N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB054N06N3 - Power-Transistor
(Infineon)
Ie\Q
IPB054N06N3 G IPP057N06N3 G
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I.