IPB117N20NFD N-Channel MOSFET

INCHANGE

IPB117N20NFD Description

Isc N-Channel MOSFET Transistor IPB117N20NFD *.

IPB117N20NFD Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB117N20NFD Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 84 60 336 PD Total Dissipation @TC=25℃ 300 Tch Max. Operating J

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Datasheet Details

Part number: IPB117N20NFD
Manufacturer: INCHANGE
File Size: 253.71 KB
Datasheet: IPB117N20NFD-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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