IPB123N10N3G N-Channel MOSFET

INCHANGE

IPB123N10N3G Description

Isc N-Channel MOSFET Transistor IPB123N10N3G *.

IPB123N10N3G Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB123N10N3G Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 58 42 232 PD Total Dissipation @TC=25℃ 94 Tch Max. Operating Ju

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Datasheet Details

Part number: IPB123N10N3G
Manufacturer: INCHANGE
File Size: 254.16 KB
Datasheet: IPB123N10N3G-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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