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IPB123N10N3, IPB123N10N3G Power-Transistor

IPB123N10N3 Description

IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor .

IPB123N10N3 Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qual

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IPB123N10N3, IPB123N10N3G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IPB123N10N3, IPB123N10N3G
Manufacturer
Infineon ↗
File Size
342.25 KB
Datasheet
IPB123N10N3G-InfineonTechnologies.pdf
Description
Power-Transistor
Note
This datasheet PDF includes multiple part numbers: IPB123N10N3, IPB123N10N3G.
Please refer to the document for exact specifications by model.

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Power-Transistor Infineon
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