IPB108N15N3G Datasheet - INCHANGE

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IPB108N15N3G N-Channel MOSFET

Isc N-Channel MOSFET Transistor IPB108N15N3G *.

IPB108N15N3G-INCHANGE.pdf

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Datasheet Details

Part number:

IPB108N15N3G

Manufacturer:

INCHANGE

File Size:

254.48 KB

Description:

N-Channel MOSFET

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 83 59 332 PD Total Dissipation @TC=25℃ 214 Tch Max. Operating J

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IPB108N15N3G N-Channel MOSFET INCHANGE

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