IPB108N15N3 Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; Halogen free
IPB108N15N3G-InfineonTechnologies.pdf
Datasheet Details
IPB108N15N3, IPB108N15N3G
736.14 KB
Power-transistor.
This datasheet PDF includes multiple part numbers: IPB108N15N3, IPB108N15N3G.
Please refer to the document for exact specifications by model.
IPB108N15N3 Distributor
📁 Related Datasheet
IPB108N15N3G Power Transistor (Infineon Technologies)
IPB108N15N3G N-Channel MOSFET (INCHANGE)
IPB100N04S2-04 Power-Transistor (Infineon Technologies)
IPB100N04S2L-03 Power-Transistor (Infineon Technologies)
IPB100N04S3-03 OptiMOS-T Power-Transistor (Infineon Technologies)
IPB100N04S4-H2 OptiMOS-T2 Power-Transistor (Infineon Technologies)
IPB100N06S2-05 Power-Transistor (Infineon Technologies)
IPB100N06S2L-05 Power-Transistor (Infineon Technologies)
