IPB107N20N3

Power-Transistor

Infineon

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Quali

IPB107N20N3

629.28 KB

Power-transistor.

📁 Related Datasheet

IPB107N20N3 N-Channel MOSFET (INCHANGE)

IPB107N20N3G Power-Transistor (Infineon Technologies)

IPB107N20NA Power-Transistor (Infineon)

IPB107N20NA N-Channel MOSFET (INCHANGE)

IPB100N04S2-04 Power-Transistor (Infineon Technologies)

IPB100N04S2L-03 Power-Transistor (Infineon Technologies)

IPB100N04S3-03 OptiMOS-T Power-Transistor (Infineon Technologies)

IPB100N04S4-H2 OptiMOS-T2 Power-Transistor (Infineon Technologies)

IPB100N06S2-05 Power-Transistor (Infineon Technologies)

IPB100N06S2L-05 Power-Transistor (Infineon Technologies)

TAGS

IPB107N20N3 Power-Transistor Infineon

Image Gallery