IPB107N20N3G

Power-Transistor

Infineon Technologies

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualified according to J

IPB107N20N3G

Infineon ↗ Technologies

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Power-transistor.

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IPB107N20N3G Power-Transistor Infineon Technologies

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