IPB107N20N3G Power-Transistor

Infineon Technologies

Description

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor .

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Datasheet Specifications

Part number: IPB107N20N3G
Manufacturer: Infineon ↗ Technologies
File Size: 629.28 KB
Datasheet: IPB107N20N3G_InfineonTechnologies.pdf
Description: Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to J

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IPB107N20N3G Power-Transistor Infineon Technologies

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