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IPB65R225C7

N-Channel MOSFET

IPB65R225C7 Features

* Static drain-source on-resistance: RDS(on) ≤0.225Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching super junction MO

IPB65R225C7 General Description


*Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20.

IPB65R225C7 Datasheet (265.83 KB)

Preview of IPB65R225C7 PDF

Datasheet Details

Part number:

IPB65R225C7

Manufacturer:

INCHANGE

File Size:

265.83 KB

Description:

N-channel mosfet.

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IPB65R225C7 N-Channel MOSFET INCHANGE

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