IPD079N06L3 N-Channel MOSFET

INCHANGE

IPD079N06L3 Description

isc N-Channel MOSFET Transistor IPD079N06L3，IIPD079N06L3 *.

IPD079N06L3 Features

* Static drain-source on-resistance: RDS(on)≤7.9mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Frequency switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

IPD079N06L3 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPD079N06L3 Datasheet Preview — Preview of IPD079N06L3 PDF

Datasheet Details

Part number: IPD079N06L3
Manufacturer: INCHANGE
File Size: 238.93 KB
Datasheet: IPD079N06L3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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