IPD60R380P6 Datasheet, Mosfet, INCHANGE

IPD60R380P6 Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤0.38Ω
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance

PDF File Details

Part number:

IPD60R380P6

Manufacturer:

INCHANGE

File Size:

238.28kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD60R380P6 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD60R380P6

INCHANGE

📁 Related Datasheet

IPD60R380P6 - MOSFET (Infineon)
IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET 600V CoolMOSª P6 Power Transistor CoolMOS™ is a revolutionary technology for high voltage .

IPD60R380C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.4 Final Powe.

IPD60R380C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanc.

IPD60R380E6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Powe.

IPD60R380E6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very hi.

IPD60R385CP - Power Transistor (Infineon Technologies)
CoolMOS™ CP 600V 600V CoolMOS™ CP Power Transistor IPD60R385CP Data Sheet Rev. 2.6 Final Power Management & Multimarket 4VVS=>Aa฀#:A0<฀&<,9=4=>:< 7LH.

IPD60R385CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R385CP,IIPD60R385CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.385Ω ·Enhancement mode: ·100% avalan.

IPD60R360P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanc.

IPD60R360P7 - MOSFET (Infineon)
IPD60R360P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.

IPD60R360P7S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avala.