IPD60R3K3C6 Datasheet, Mosfet, INCHANGE

IPD60R3K3C6 Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤3.3Ω
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance a

PDF File Details

Part number:

IPD60R3K3C6

Manufacturer:

INCHANGE

File Size:

238.33kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD60R3K3C6 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD60R3K3C6

INCHANGE

📁 Related Datasheet

IPD60R3K3C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.3 Final Indu.

IPD60R3K4CE - MOSFET (Infineon)
IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,.

IPD60R3K4CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.4Ω ·Enhancement mode: ·100% avalanch.

IPD60R360P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avalanc.

IPD60R360P7 - MOSFET (Infineon)
IPD60R360P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.

IPD60R360P7S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.36Ω ·Enhancement mode: ·100% avala.

IPD60R360P7S - MOSFET (Infineon)
IPD60R360P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFE.

IPD60R380C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.4 Final Powe.

IPD60R380C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R380C6,IIPD60R380C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanc.

IPD60R380E6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Powe.