Datasheet4U Logo Datasheet4U.com

IPD60R600E6

N-Channel MOSFET

IPD60R600E6 Features

* Static drain-source on-resistance: RDS(on)≤0.6Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Fast switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IPD60R600E6 Datasheet (237.35 KB)

Preview of IPD60R600E6 PDF

Datasheet Details

Part number:

IPD60R600E6

Manufacturer:

INCHANGE

File Size:

237.35 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPD60R600E6 MOSFET (Infineon Technologies)

IPD60R600C6 MOSFET (Infineon Technologies)

IPD60R600C6 N-Channel MOSFET (INCHANGE)

IPD60R600CM8 MOSFET (Infineon)

IPD60R600CP Power Transistor (Infineon Technologies)

IPD60R600CP N-Channel MOSFET (INCHANGE)

IPD60R600P6 MOSFET (Infineon)

IPD60R600P6 N-Channel MOSFET (INCHANGE)

IPD60R600P7 N-Channel MOSFET (INCHANGE)

IPD60R600P7 MOSFET (Infineon)

TAGS

IPD60R600E6 N-Channel MOSFET INCHANGE

Image Gallery

IPD60R600E6 Datasheet Preview Page 2

IPD60R600E6 Distributor