Datasheet4U Logo Datasheet4U.com

IPD60R650CE Datasheet - INCHANGE

IPD60R650CE N-Channel MOSFET

IPD60R650CE Features

* Static drain-source on-resistance: RDS(on)≤0.65Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Fast switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IPD60R650CE-INCHANGE.pdf

Preview of IPD60R650CE PDF
IPD60R650CE Datasheet Preview Page 2

Datasheet Details

Part number:

IPD60R650CE

Manufacturer:

INCHANGE

File Size:

237.66 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPD60R650CE MOSFET (Infineon Technologies)

IPD60R600C6 MOSFET (Infineon Technologies)

IPD60R600C6 N-Channel MOSFET (INCHANGE)

IPD60R600CM8 MOSFET (Infineon)

IPD60R600CP Power Transistor (Infineon Technologies)

IPD60R600CP N-Channel MOSFET (INCHANGE)

IPD60R600E6 MOSFET (Infineon Technologies)

IPD60R600E6 N-Channel MOSFET (INCHANGE)

TAGS

IPD60R650CE IPD60R650CE N-Channel MOSFET INCHANGE

IPD60R650CE Distributor