IPD60R650CE Datasheet, Mosfet, INCHANGE

IPD60R650CE Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤0.65Ω
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance

PDF File Details

Part number:

IPD60R650CE

Manufacturer:

INCHANGE

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237.66kb

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📄 Datasheet

Description:

N-channel mosfet.

IPD60R650CE Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

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IPD60R650CE

INCHANGE

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