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IPD60R650CE

N-Channel MOSFET

IPD60R650CE Features

* Static drain-source on-resistance: RDS(on)≤0.65Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Fast switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IPD60R650CE Datasheet (237.66 KB)

Preview of IPD60R650CE PDF

Datasheet Details

Part number:

IPD60R650CE

Manufacturer:

INCHANGE

File Size:

237.66 KB

Description:

N-channel mosfet.

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IPD60R650CE N-Channel MOSFET INCHANGE

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