IPI16CN10N N-Channel MOSFET

INCHANGE

IPI16CN10N Description

isc N-Channel MOSFET Transistor *.

IPI16CN10N Features

* Static drain-source on-resistance: RDS(on) ≤16mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPI16CN10N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 53 A IDM Drain Current-Single Pulsed 212 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number: IPI16CN10N
Manufacturer: INCHANGE
File Size: 282.20 KB
Datasheet: IPI16CN10N-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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