IPI180N10N3 N-Channel MOSFET

INCHANGE

IPI180N10N3 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI180N10N3 *.

IPI180N10N3 Features

* Static drain-source on-resistance: RDS(on) ≤18mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPI180N10N3 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 172 PD Total Dissipation @TC=25℃ 71 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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IPI180N10N3 Datasheet Preview — Preview of IPI180N10N3 PDF

Datasheet Details

Part number: IPI180N10N3
Manufacturer: INCHANGE
File Size: 256.65 KB
Datasheet: IPI180N10N3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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