IPI70R950CE - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IPI70R950CE
Manufacturer	INCHANGE
File Size	282.31 KB
Description	N-Channel MOSFET
Datasheet	IPI70R950CE-INCHANGE.pdf

IPI70R950CE Product details

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 68 W Tj Max.Operating Junction Temperature -40~150 ℃ Tstg Storage Temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT

Features

Static drain-source on-resistance: RDS(on) ≤0.38Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 29, 2020 |