IPP110N20N3 Datasheet, Mosfet, INCHANGE

✔ IPP110N20N3 Features

Static drain-source on-resistance: RDS(on) ≤11mΩ
Enhancement mode
Fast Switching Speed
100% avalanche tested
Minimum Lot-to-Lot variations for robust device performa

✔ IPP110N20N3 Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not d

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IPP110N20N3

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INCHANGE

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📄 Datasheet

Description:

N-channel mosfet.

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