IPP12CN10L Datasheet - INCHANGE

IPP12CN10L, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP12CN10L，IIPP12CN10L *

Features

* Static drain-source on-resistance: RDS(on) ≤12mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 69 IDM Drain Current-Single Pulsed 276 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 175 Tstg Storage T

IPP12CN10L-INCHANGE.pdf