IPP12CN10N N-Channel MOSFET

INCHANGE

IPP12CN10N Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP12CN10N，IIPP12CN10N *.

IPP12CN10N Features

* Static drain-source on-resistance: RDS(on) ≤12.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPP12CN10N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 67 IDM Drain Current-Single Pulsed 268 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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IPP12CN10N Datasheet Preview — Preview of IPP12CN10N PDF

Datasheet Details

Part number: IPP12CN10N
Manufacturer: INCHANGE
File Size: 241.59 KB
Datasheet: IPP12CN10N-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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