IPP12CN10NG
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Power-transistor.
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IPP12CN10N - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP12CN10N,IIPP12CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12.9mΩ ·Enhance.
IPP12CN10N - Power-Transistor
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IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
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IPP12CN10L - Power-Transistor
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Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPP12CN10L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP12CN10L,IIPP12CN10L
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching.
IPP12CN10LG - Power-Transistor
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Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPP12CNE8NG - Power-Transistor
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IPB12CNE8N G IPI12CNE8N G
IPD12CNE8N G IPP12CNE8N G
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Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr.
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IPP120N06NG - Power-Transistor
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IPB120N06N G
IPP120N06N G
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