IPP110N20NA Datasheet, Mosfet, INCHANGE

IPP110N20NA Features

  • Mosfet
  • Static drain-source on-resistance: RDS(on) ≤11mΩ
  • Enhancement mode
  • Fast Switching Speed
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations f

PDF File Details

Part number:

IPP110N20NA

Manufacturer:

INCHANGE

File Size:

240.89kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IPP110N20NA 📥 Download PDF (240.89kb)
Page 2 of IPP110N20NA

IPP110N20NA Application

  • Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPP110N20NA
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IPP110N20N3 - Power-Transistor (Infineon)
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPP110N20N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP110N20N3,IIPP110N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switchin.

IPP110N20N3G - Power Transistor (Infineon Technologies)
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product .

IPP110N20NA - Power-Transistor (Infineon)
IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on.

IPP110N06L - Power-Transistor (Infineon)
%&$ #™ Power-Transistor Features P ? A61BCBF9C3 89>7 3 ? >E5AC5AB 1>4 BH>3 A53 C9693 1C9? > P( 3 81>>5<5>81>3 5=5>C

IPP110N06LG - Power-Transistor (Infineon Technologies)
%&$ #™ Power-Transistor Features P ? A61BCBF9C3 89>7 3 ? >E5AC5AB 1>4 BH>3 A53 C9693 1C9? > P( 3 81>>5<5>81>3 5=5>C

IPP111N15N3 - Power-Transistor (Infineon)
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPP111N15N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP111N15N3,IIPP111N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switch.

IPP111N15N3G - Power Transistor (Infineon Technologies)
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features •.

IPP114N03LG - Power-Transistor (Infineon)
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 200V 88A TO220-3
DigiKey
IPP110N20NAAKSA1
484 In Stock
Qty : 500 units
Unit Price : $4.53
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts