IPP111N15N3 Datasheet, Mosfet, INCHANGE

IPP111N15N3 Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤11.1mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations

PDF File Details

Part number:

IPP111N15N3

Manufacturer:

INCHANGE

File Size:

240.93kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPP111N15N3 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPP111N15N3

INCHANGE

📁 Related Datasheet

IPP111N15N3 - Power-Transistor (Infineon)
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPP111N15N3G - Power Transistor (Infineon Technologies)
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features •.

IPP110N06L - Power-Transistor (Infineon)
%&$ #™ Power-Transistor Features P ? A61BCBF9C3 89>7 3 ? >E5AC5AB 1>4 BH>3 A53 C9693 1C9? > P( 3 81>>5<5>81>3 5=5>C

IPP110N06LG - Power-Transistor (Infineon Technologies)
%&$ #™ Power-Transistor Features P ? A61BCBF9C3 89>7 3 ? >E5AC5AB 1>4 BH>3 A53 C9693 1C9? > P( 3 81>>5<5>81>3 5=5>C

IPP110N20N3 - Power-Transistor (Infineon)
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPP110N20N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP110N20N3，IIPP110N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switchin.

IPP110N20N3G - Power Transistor (Infineon Technologies)
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product .

IPP110N20NA - Power-Transistor (Infineon)
IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on.

IPP110N20NA - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP110N20NA，IIPP110N20NA ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switchin.

IPP114N03LG - Power-Transistor (Infineon)
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.