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IPP65R280E6

N-Channel MOSFET

IPP65R280E6 Features

* Static drain-source on-resistance: RDS(on) ≤0.28Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching SJ MOSFET while no

IPP65R280E6 General Description


*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13.8 IDM Drain Current-Single Pulsed 39 PD To.

IPP65R280E6 Datasheet (240.82 KB)

Preview of IPP65R280E6 PDF

Datasheet Details

Part number:

IPP65R280E6

Manufacturer:

INCHANGE

File Size:

240.82 KB

Description:

N-channel mosfet.

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IPP65R280E6 N-Channel MOSFET INCHANGE

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