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IRF3709Z - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(on) ≤6.3mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRF3709Z

Datasheet Details

Part number IRF3709Z
Manufacturer INCHANGE
File Size 242.76 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF3709Z Datasheet
Additional preview pages of the IRF3709Z datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3709Z， IIRF3709Z ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤6.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 87 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 79 Tj Max.
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