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IRF3709Z N-Channel MOSFET

IRF3709Z Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3709Z， IIRF3709Z *.

IRF3709Z Features

* Low drain-source on-resistance: RDS(on) ≤6.3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF3709Z Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 87 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRF3709Z
Manufacturer
INCHANGE
File Size
242.76 KB
Datasheet
IRF3709Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF3709Z-like datasheet