IRFB3607 Datasheet - INCHANGE

IRFB3607, TO-220 N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607，IIRFB3607 *

Features

* Static drain-source on-resistance: RDS(on) ≤9.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 310 PD Total Dissipation @TC=25℃ 140 Tj Max.
Operating Junction Temperature 175 Tstg Storage Te

IRFB3607-INCHANGE.pdf