IRFB3607 Datasheet - INCHANGE

IRFB3607, TO-262 N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607 *

Features

* Static drain-source on-resistance: RDS(on) ≤9.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 310 A PD Total Dissipation @TC=25℃ 140 W Tj Max.
Operating Junction Temperature

IRFB3607_INCHANGE.pdf