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IRFB4710 N-Channel MOSFET

IRFB4710 Description

isc N-Channel MOSFET Transistor IRFB4710，IIRFB4710 *.

IRFB4710 Features

* Static drain-source on-resistance: RDS(on) ≤0.014Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFB4710 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 300 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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Datasheet Details

Part number
IRFB4710
Manufacturer
INCHANGE
File Size
241.02 KB
Datasheet
IRFB4710-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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