IRFI4510G - N-Channel MOSFET
IRFI4510G Features
* Low drain-source on-resistance: RDS(on) ≤ 13.5mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Device for use in a wide variety of applications
