Datasheet Details
- Part number
- IRFI4510G
- Manufacturer
- INCHANGE
- File Size
- 240.97 KB
- Datasheet
- IRFI4510G-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRFI4510G Description
isc N-Channel MOSFET Transistor IRFI4510G,IIRFI4510G *.
IRFI4510G Features
* Low drain-source on-resistance:
RDS(on) ≤ 13.5mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRFI4510G Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
35
IDM
Drain Current-Single Pulsed
180
PD
Total Dissipation @TC=25℃
42
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Te
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