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IRFI4510GPBF Power MOSFET

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Description

PD - 97790 IRFI4510GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High S.

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Features

* 3) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3
* BV
* Iav) = DT/ ZthJC Iav = 2DT/ [1.3
* BV
* Zth] EAS (AR) = PD (ave)
* tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRFI4510G

Applications

* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt

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