IRFI4510GPBF - Power MOSFET
PD - 97790 IRFI4510GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free VDSS RDS(on) typ.
max.
ID D 100V 10.7m 13.5m 35A D G G D S S TO-220AB Full-Pak D S
IRFI4510GPBF Features
* 3) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3
* BV
* Iav) = DT/ ZthJC Iav = 2DT/ [1.3
* BV
* Zth] EAS (AR) = PD (ave)
* tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 Free Datasheet http://www.Datasheet4U.com IRFI4510G
