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IRFIBE20G N-Channel MOSFET

IRFIBE20G Description

iscN-Channel MOSFET Transistor IRFIBE20G *.

IRFIBE20G Features

* Low drain-source on-resistance: RDS(ON) =6.5Ω (MAX)
* Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLU

IRFIBE20G Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRFIBE20G
Manufacturer
INCHANGE
File Size
270.18 KB
Datasheet
IRFIBE20G-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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