Datasheet4U Logo Datasheet4U.com

IRFIBE30G - N-Channel MOSFET

IRFIBE30G Description

iscN-Channel MOSFET Transistor IRFIBE30G *.

IRFIBE30G Features

* Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX)
* Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE M

IRFIBE30G Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRFIBE30G PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRFIBE30G
Manufacturer
INCHANGE
File Size
270.14 KB
Datasheet
IRFIBE30G-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRFIBE30 - Power MOSFET (International Rectifier)
  • IRFIBE20G - Power MOSFET (International Rectifier)
  • IRFIBE20GPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFIB41N15DPbF - HEXFET Power MOSFET (International Rectifier)
  • IRFIB5N50L - MOTOR Control Application (International Rectifier)
  • IRFIB5N50LPBF - SMPS MOSFET (International Rectifier)
  • IRFIB5N65 - Power MOSFET (International Rectifier)
  • IRFIB5N65A - Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRFIBE30G-like datasheet

IRFIBE30G Stock/Price