Datasheet4U Logo Datasheet4U.com

IRFR3410 - N-Channel MOSFET

IRFR3410 Description

isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410 *.

IRFR3410 Features

* Static drain-source on-resistance: RDS(on)≤39mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High frequency DC-DC converters
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET

IRFR3410 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRFR3410 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRFR3410
Manufacturer
INCHANGE
File Size
238.60 KB
Datasheet
IRFR3410-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRFR3410PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFR3411PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFR3412 - SMPS MOSFET (International Rectifier)
  • IRFR3412PBF - SMPS MOSFET (International Rectifier)
  • IRFR3418 - HEXFET Power MOSFET (International Rectifier)
  • IRFR3418PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFR310 - Power MOSFET (Fairchild Semiconductor)
  • IRFR310A - Power MOSFET (Fairchild Semiconductor)

📌 All Tags

INCHANGE IRFR3410-like datasheet

IRFR3410 Stock/Price