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IRFR3607 - N-Channel MOSFET

IRFR3607 Description

isc N-Channel MOSFET Transistor IRFR3607, IIRFR3607 *.

IRFR3607 Features

* Static drain-source on-resistance: RDS(on)≤9mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRFR3607 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 310 PD Total Dissipation @TC=25℃ 140 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRFR3607
Manufacturer
INCHANGE
File Size
238.58 KB
Datasheet
IRFR3607-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRFR3607-like datasheet

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