Datasheet Details
- Part number
- IRFSL4410Z
- Manufacturer
- INCHANGE
- File Size
- 257.36 KB
- Datasheet
- IRFSL4410Z-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRFSL4410Z Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFSL4410Z *.
IRFSL4410Z Features
* Static drain-source on-resistance:
RDS(on) ≤9.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRFSL4410Z Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
97
IDM
Drain Current-Single Pulsed
390
PD
Total Dissipation @TC=25℃
230
Tj
Max. Operating Junction Temperature
175
Tstg
Storage T
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