Datasheet4U Logo Datasheet4U.com

IRFU214 N-Channel MOSFET

IRFU214 Description

iscN-Channel MOSFET Transistor IRFU214 *.

IRFU214 Features

* Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V
* Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABS

IRFU214 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRFU214 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRFU214
Manufacturer
INCHANGE
File Size
290.79 KB
Datasheet
IRFU214-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRFU214A - Power MOSFET (Samsung)
  • IRFU214B - 250V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFU214BA3HD - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
  • IRFU214PBF - Power MOSFET (International Rectifier)
  • IRFU210 - Power MOSFET (International Rectifier)
  • IRFU210A - Power MOSFET (Samsung)
  • IRFU210B - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFU210PBF - HEXFET POWER MOSFET (International Rectifier)

📌 All Tags

INCHANGE IRFU214-like datasheet