Datasheet Details
- Part number
- IRLZ24N
- Manufacturer
- INCHANGE
- File Size
- 241.50 KB
- Datasheet
- IRLZ24N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRLZ24N Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ24N, IIRLZ24N *.
IRLZ24N Features
* Static drain-source on-resistance:
RDS(on) ≤0.06Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRLZ24N Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGS
Gate-Source Voltage
±16
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
72
PD
Total Dissipation @TC=25℃
45
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temp
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