Datasheet4U Logo Datasheet4U.com

IRLZ24N

N-Channel MOSFET

IRLZ24N Features

* Static drain-source on-resistance: RDS(on) ≤0.06Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* reliable device for use in a wide variety of applications

IRLZ24N Datasheet (241.50 KB)

Preview of IRLZ24N PDF

Datasheet Details

Part number:

IRLZ24N

Manufacturer:

INCHANGE

File Size:

241.50 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IRLZ24 HEXFET POWER MOSFET (International Rectifier)

IRLZ24 N-Channel MOSFET (Samsung Electronics)

IRLZ24 Power MOSFET (Vishay)

IRLZ24A Advanced Power MOSFET (Samsung Electronics)

IRLZ24L Power MOSFET (Vishay Siliconix)

IRLZ24N HEXFET POWER MOSFET (International Rectifier)

IRLZ24NL Power MOSFET (International Rectifier)

IRLZ24NLPBF Power MOSFET (International Rectifier)

IRLZ24NPBF Power MOSFET (International Rectifier)

IRLZ24NS Power MOSFET (International Rectifier)

TAGS

IRLZ24N N-Channel MOSFET INCHANGE

Image Gallery

IRLZ24N Datasheet Preview Page 2

IRLZ24N Distributor