IXFA22N65X2 Datasheet, Mosfet, INCHANGE

PDF File Details

Part number:

IXFA22N65X2

Manufacturer:

INCHANGE

File Size:

201.01kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Drain Current : ID= 22A@ TC=25℃

Drain Source Voltage : VDSS= 650V(Min)

100% Avalanche Rated

Minim

IXFA22N65X2 Application

• Applications .
• Switch-Mode and Resonant-Mode Power Supplies
• DC-DC Converters
• AC and DC Motor Drives ABSOLUTE MAXIMUM R

TAGS

IXFA22N65X2

INCHANGE

📁 Related Datasheet

IXFA22N65X2 - Power MOSFET (IXYS)
X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM .

IXFA22N60P3 - Power MOSFETs (IXYS Corporation)
Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3 .

IXFA220N06T3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXFA220N06T3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Fully characterized avalanche volt.

IXFA220N06T3 - Power MOSFET (IXYS)
Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 VDSS = ID25 = RDS(on)  60V 220A 4m N-Ch.

IXFA20N50P3 - Power MOSFET (IXYS)
Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 .

IXFA20N85XHV - Power MOSFET (IXYS)
X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA20N85XHV VDSS = ID25 =  RDS(on) 850V 20A 330m TO-263HV Symbol VD.

IXFA20N85XHV - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IXFA230N075T2 - Power MOSFET (IXYS Corporation)
TrenchT2TM HiperFETTM Power MOSFET IXFA230N075T2 IXFP230N075T2 VDSS ID25 RDS(on) = 75V = 230A ≤ 4.2mΩ N-Channel Enhancement Mode Avalanche Rated .

IXFA230N075T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXFA230N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·Fully characterized avalanche v.

IXFA230N075T2-7 - Power MOSFET (IXYS)
Advance Technical Information TrenchT2TM HiperFETTM IXFA230N075T2-7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier .