Part number:
IXFX360N10T
Manufacturer:
INCHANGE
File Size:
332.97 KB
Description:
N-channel mosfet.
IXFX360N10T Features
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 2.9mΩ(Max)@VGS=10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switch-Mode and Resonant-M
IXFX360N10T Datasheet (332.97 KB)
Datasheet Details
IXFX360N10T
INCHANGE
332.97 KB
N-channel mosfet.
📁 Related Datasheet
IXFX360N10T Power MOSFET (IXYS)
IXFX360N15T2 Power MOSFET (IXYS)
IXFX30N100Q2 Power MOSFET (IXYS Corporation)
IXFX30N50Q Power MOSFET (IXYS Corporation)
IXFX320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)
IXFX320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)
IXFX32N100P Power MOSFET (IXYS)
IXFX32N100Q3 Power MOSFET (IXYS)
IXFX360N10T Distributor