IXFX360N15T2, IXFK360N15T2 Datasheet - IXYS

IXFX360N15T2 - Power MOSFET

GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N15T2 IXFX360N15T2 VDSS = ID25 = RDS(on)  trr  150V 360A 4.0m 150ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C (Chip Capability) External Lead Current Limit TC .

IXFX360N15T2 Features

* International Standard Packages

* High Current Handling Capability

* Fast Intrinsic Diode

* Avalanche Rated

* Low RDS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Synchronous Recification

* DC-DC Converters

* Battery