IXFX360N15T2 - Power MOSFET
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N15T2 IXFX360N15T2 VDSS = ID25 = RDS(on) trr 150V 360A 4.0m 150ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC .
IXFX360N15T2 Features
* International Standard Packages
* High Current Handling Capability
* Fast Intrinsic Diode
* Avalanche Rated
* Low RDS(on)
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Applications
* Synchronous Recification
* DC-DC Converters
* Battery