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IXFX20N120, IXFK20N120 Datasheet - IXYS Corporation

IXFX20N120 - HiPerFET Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 20N120 IXFX 20N120 VDSS ID25 RDS(on) = 1200 V = 20 A = 0.75 Ω trr ≤ 300 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55

IXFX20N120 Features

* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Battery chargers z Switched-mode

IXFK20N120_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFX20N120, IXFK20N120. Please refer to the document for exact specifications by model.
IXFX20N120 Datasheet Preview Page 2 IXFX20N120 Datasheet Preview Page 3

Datasheet Details

Part number:

IXFX20N120, IXFK20N120

Manufacturer:

IXYS Corporation

File Size:

584.80 KB

Description:

Hiperfet power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFX20N120, IXFK20N120.
Please refer to the document for exact specifications by model.

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