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IXFX210N17T, IXFK210N17T - GigaMOS Power MOSFET

IXFX210N17T Description

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK210N17.

IXFX210N17T Features

* z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z

IXFX210N17T Applications

* z z z z 50 μA 3 mA 7.5 mΩ z z z z Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS100138(03

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXFX210N17T, IXFK210N17T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFX210N17T, IXFK210N17T
Manufacturer
IXYS
File Size
147.36 KB
Datasheet
IXFK210N17T_IXYS.pdf
Description
GigaMOS Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFX210N17T, IXFK210N17T.
Please refer to the document for exact specifications by model.

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GigaMOS Power MOSFET IXYS
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